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Toshiba Corporation has developed the world’s first 15-nanometre (nm) process technology, which will apply to 2-bit-per-cell 128-gigabit (16 gigabytes) NAND flash memories. Mass production with the new technology will start at the end of April at Fab 5 Yokkaichi Operations, Toshiba’s NAND flash fabrication facility (fab), replacing second generation 19 nm process technology, Toshiba’s previous flagship process. The second stage of Fab 5 is currently under construction, and the...
Read MoreHitachi Data Systems Corporation (HDS) has announced exciting new technology to accelerate customer success with Business-Defined IT – a closer linking of a company’s business and technology objectives that demands a more responsive IT foundation. Called a “Continuous Cloud Infrastructure”, this foundation can drive IT efficiency through a responsive, software-rich architecture that can quickly react to changing needs without continual redesign and disruption. A move...
Read MoreFujitsu bietet ab sofort ein neues, platzsparendes High-Capacity Storage-Subsystem mit sehr hoher Speicherkapazität und sehr einfacher Bedienung, das direkt an die Serversysteme angeschlossen werden kann
Read MoreViolin Memory®, Inc. has announced general availability of the Windows Flash Array (WFA). Jointly developed with Microsoft® Corp., the WFA is the first all-flash high-performance storage array powered by Windows® Storage Server 2012 R2 to deliver a rich set of high performance storage features and data services for the enterprise.
Read MoreFor the fourth consecutive year, DataCore has conducted a survey of 388 global IT professionals to identify current storage challenges that organisations are facing and what forces are driving demand for software-defined storage (SDS).
Read MoreTrust in major US data storage companies is at an all-time low following the recent NSA and GCHQ surveillance scandal, according to a new poll.
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Customers who adopt Dell EMC VxBlock technology experienced 99% less planned and unplanned downtime according to a study by IDC.
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